Semiconductor Devices, Methods of Manufacture Thereof, and Capacitors

ABSTRACT

Semiconductor devices, methods of manufacture thereof, and capacitors are disclosed. In some embodiments, a semiconductor device includes a first capacitor and a protection device coupled in series with the first capacitor. A second capacitor is coupled in parallel with the first capacitor and the protection device.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications, such as personal computers, cell phones, digital cameras, and other electronic equipment, as examples. Semiconductor devices are typically fabricated by sequentially depositing insulating or dielectric layers, conductive layers, and semiconductive layers of material over a semiconductor substrate, and patterning the various material layers using lithography to form circuit components and elements thereon.

Capacitors are elements that are used extensively in semiconductor devices for storing an electrical charge. Capacitors essentially comprise two conductive plates separated by an insulating or dielectric material. Capacitors are used in applications such as electronic filters, analog-to-digital converters, memory devices, control applications, and many other types of semiconductor device applications.

In some semiconductor devices, power lines and ground lines are routed to logic gates and other devices in integrated circuits. The current from a power supply flows through the power lines, logic gates, and finally to ground. During switching of the logic gates, a large amount of change in the current occurs within a short period of time. Decoupling capacitors are used to absorb these glitches during current switching. Decoupling capacitors are also used to maintain a constant voltage between the supply voltage and ground. The decoupling capacitors act as charge reservoirs that additionally supply current to circuits when required, to prevent momentary drops in the supplied voltage.

One type of decoupling capacitor used is referred to as a metal-insulator-metal (MIM) capacitor. A MIM capacitor has two metal layers and a dielectric insulator layer between the two metal layers. A capacitance is formed between the two metal layers. MIM capacitors are often fabricated in interconnect layers of a semiconductor device.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present disclosure, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:

FIG. 1 is a schematic of a semiconductor device that includes a protection structure that comprises a plurality of protection devices for capacitors in accordance with some embodiments of the present disclosure;

FIG. 2 illustrates the schematic of FIG. 1 after one of the capacitors has failed in accordance with some embodiments;

FIG. 3 is a schematic of a semiconductor device wherein the protection devices comprise redundant capacitors in accordance with some embodiments;

FIG. 4 is a top view of a semiconductor device illustrating a configuration for a protection device comprising a redundant capacitor and a capacitor coupled to the protection device in accordance with some embodiments;

FIG. 5 is a cross-sectional view of the semiconductor device shown in FIG. 4 at view 5-5′;

FIG. 6 is a cross-sectional view of the semiconductor device shown in FIG. 4 at view 6-6′;

FIG. 7 is a schematic of a semiconductor device wherein the protection devices comprise fuses in accordance with some embodiments;

FIG. 8 is a cross-sectional view of a semiconductor device wherein a protection device comprising a fuse comprises a segment of semiconductive material in accordance with some embodiments;

FIG. 9 is a top view of a semiconductor device wherein a protection device comprising a fuse comprises a portion of a conductive line in accordance with some embodiments;

FIG. 10 is a cross-sectional view of a semiconductor device wherein a protection device comprising a fuse comprises a conductive via in accordance with some embodiments; and

FIG. 11 is a flow chart of a method of manufacturing a semiconductor device in accordance with some embodiments.

Corresponding numerals and symbols in the different figures generally refer to corresponding parts unless otherwise indicated. The figures are drawn to clearly illustrate the relevant aspects of the embodiments and are not necessarily drawn to scale.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of some of the embodiments of the present disclosure are discussed in detail below. It should be appreciated, however, that the present disclosure provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the disclosure, and do not limit the scope of the disclosure.

Some embodiments of the present disclosure are related to semiconductor devices that include large-area capacitors and methods of manufacture thereof. Novel large-area capacitors that include protection structures and devices will be described herein.

FIG. 1 is a schematic of a semiconductor device 100 that includes a large-area capacitor 101 that includes a plurality of capacitors 102 a, 102 b . . . 102 y, and 102 z and a protection structure 104 in accordance with some embodiments. The protection structure 104 includes a plurality of protection devices 104 a, 104 b . . . 104 y, and 104 z for the capacitors 102 a, 102 b . . . 102 y, and 102 z in accordance with some embodiments of the present disclosure. Each of the plurality of protection devices 104 a, 104 b . . . 104 y, and 104 z is coupled in series with one of the plurality of capacitors 102 a, 102 b . . . 102 y, and 102 z in accordance with some embodiments, e.g., between a first terminal T1 and a second terminal T2. The protection devices 104 a, 104 b . . . 104 y, and 104 z of the protection structure 104 comprise redundant capacitors or fuses in some embodiments, which will be described further herein.

The large-area capacitor 101 of the semiconductor device 100 in some embodiments has an overall width and/or length in a top view of about a few hundred micrometers (μm) to about several centimeters (cm) in some embodiments. The large-area capacitor 101 includes about 1,000 or more of the capacitors 102 a, 102 b . . . 102 y, and 102 z and protection devices 104 a, 104 b . . . 104 y, and 104 z in some embodiments. Alternatively, the large-area capacitor 101 may comprise other dimensions and may include fewer than 1,000 of the capacitors 102 a, 102 b . . . 102 y, and 102 z and protection devices 104 a, 104 b . . . 104 y, and 104 z. The large-area capacitor 101 comprises a metal-insulator-metal (MIM) capacitor in some embodiments. The large-area capacitor 101 may be formed in a plurality of metallization layers of the semiconductor device 100, for example. The large-area capacitor 101 may comprise a decoupling capacitor in some applications. Alternatively, the large-area capacitor 101 may comprise other functions. The protection devices 104 a, 104 b . . . 104 y, and 104 z prevent failure of the large-area capacitor 101, to be described further herein.

A plurality of the protection devices 104 a, 104 b . . . 104 y, and 104 z is shown in FIG. 1; however, in accordance with some embodiments, only one protection device 104 a is coupled to a single capacitor 102 a in series between the two terminals T1 and T2. At least one of the other capacitors 102 b . . . 102 y, and 102 z does not include a protection device 104 b . . . 104 y, and 104 z coupled in series (not shown), in some embodiments. For example, in some embodiments, a semiconductor device 100 comprises a first capacitor 102 a shown in FIG. 1, and a protection device 104 a is coupled in series with the first capacitor 102 a. A second capacitor 102 b is coupled in parallel with the first capacitor 102 a and the protection device 104 a (e.g., the protection device 104 b is not included, and the bottom plate of the second capacitor 102 b is coupled to the second terminal T2). In embodiments wherein the protection device 104 a comprises a redundant capacitor, the protection device 104 a comprises a third capacitor, for example.

In other embodiments, a second protection device 104 b is coupled in series with the second capacitor 102 b as shown in FIG. 1, and the second capacitor 102 b and the second protection device 104 b are coupled in parallel with the first capacitor 102 a and the first protection device 104 a, also shown in FIG. 1.

In some embodiments, the large-area capacitor 101 comprises a capacitor having a plurality of first plates and a plurality of second plates. For example, in FIG. 1, each of the capacitors 102 a, 102 b . . . 102 y, and 102 z includes a top plate which is also referred to herein as a first plate. The first plate of each of the capacitors 102 a, 102 b . . . 102 y, and 102 z is coupled to the first terminal T1. Each of the capacitors 102 a, 102 b . . . 102 y, and 102 z also includes a bottom plate which is also referred to herein as a second plate. Each of the plurality of second plates is coupled to the second terminal T2 (e.g., by a protection device 104 a, 104 b . . . 104 y, and 104 z). Each of the second plates is disposed proximate one of the first plates. The first plates and the second plates may be separated from one another by a capacitor dielectric in some embodiments (see capacitor dielectric 130 shown in FIG. 5). A protection device 104 a, 104 b . . . 104 y, and/or 104 z is coupled between one of the second plates and the second terminal T2, wherein the protection device 104 a, 104 b . . . 104 y, and/or 104 z comprises a redundant capacitor or a fuse, in some embodiments.

FIG. 2 illustrates the schematic of FIG. 1 after one of the capacitors 102 b′ has a failure in accordance with some embodiments. The protection device 104 b′ coupled in series with the failed capacitor 102 b′ advantageously prevents the failure of the overall large-area capacitor 101. For example, in an event that the failed capacitor 102 b′ has an early failure caused by process defects such as particle or pinholes on a capacitor dielectric of the capacitor 102 b′, a reliability failure during a service life of the semiconductor device 100 in a field application, or other types of failures, a short may form in the failed capacitor 102 b′. In some embodiments wherein the protection device 104 b′ comprises a redundant capacitor, the associated redundant capacitor remains connected and functional in the circuit, protecting the overall large-area capacitor 101 from a catastrophic failure. In embodiments wherein the protection device 104 b′ comprises a fuse, the fuse is “blown” and turns into an open circuit which also protects the large-area capacitor 101 from a catastrophic failure, because the other capacitors 102 a . . . 102 y, and 102 z are isolated from the failed capacitor 102 b′ and remain intact and functional.

FIG. 3 is a schematic of a semiconductor device 100 wherein the protection devices 104 a, 104 b . . . 104 y, and 104 z of the protection structure 104 comprise redundant capacitors. The top plates of the redundant capacitors of the protection devices 104 a, 104 b . . . 104 y, and 104 z are coupled to the bottom plates of the capacitors 102 a, 102 b . . . 102 y, and 102 z at nodes Na, Nb . . . Ny, and Nz, respectively. The bottom plates of the redundant capacitors of the protection devices 104 a, 104 b . . . 104 y, and 104 z are coupled to the second terminal T2.

FIG. 4 is a top view of a semiconductor device 100 illustrating a configuration for a protection device 104 a comprising a redundant capacitor and a capacitor 102 a coupled to the protection device 104 a in accordance with some embodiments. FIG. 5 is a cross-sectional view of the semiconductor device 100 shown in FIG. 4 at view 5-5′, and FIG. 6 is a cross-sectional view of the semiconductor device 100 shown in FIG. 4 at view 6-6′. A portion of the large-area capacitor 101 shown in the schematic of FIG. 3 is shown in FIGS. 4, 5, and 6.

The protection device 104 a may be formed in the same metallization layers that the capacitor 102 a is formed in, as shown in FIG. 6. The protection device 104 a may be positioned adjacent, e.g., along-side and/or proximate the capacitor 102 a in some embodiments, as shown in FIGS. 4 and 6. Alternatively, the protection device 104 a may not be formed in the same metallization layers that the capacitor 102 a is formed in, and protection device 104 a may be spaced apart from the capacitor 102 a in other embodiments, not shown.

The capacitor 102 a and protection device 104 a comprising the redundant capacitor both include a bottom plate 106, a capacitor dielectric 130 disposed over the bottom plate 106, and a top plate 108 disposed over the capacitor dielectric 130. In some embodiments, the bottom plate 106 and the top plate 108 comprise MIM electrodes, for example. In some embodiments, the bottom plate 106 is larger than the top plate 108 to permit landing of conductive vias on the bottom plate 106 to make electrical connection to the bottom plate 106. For example, conductive vias 112 b and 112 c are coupled to the bottom plate 106 of the protection device 104 b (see FIGS. 4 and 5), and conductive vias 112 e and 112 f are coupled to the bottom plate of the capacitor 102 a (see FIG. 4).

The capacitor 102 a and the protection device 104 a comprising the redundant capacitor may be coupled together using a conductive line 110 a in some embodiments, as shown in FIGS. 4 and 5. The conductive line 110 a comprises node Na shown in FIG. 3, for example. The conductive line 110 a comprises a pronged shape in the top view in some embodiments. Alternatively, the conductive line 110 a may comprise other shapes, and the capacitor 102 a and protection device 104 a can be coupled together in other configurations and methods. The conductive line 110 a is coupled to the top plate 108 of the capacitor 102 a by a conductive via 112 a and to the bottom plate 106 of the protection device 104 b comprising the redundant capacitor by conductive vias 112 b and 112 c.

The top plate 108 of the protection device 104 b is coupled to a conductive line 110 b by a conductive via 112 d. The conductive line 110 b is coupled elsewhere on the semiconductor device 100 to the second terminal T2. The bottom plate 106 of the capacitor 102 a is coupled to conductive lines 110 c and 110 d by conductive vias 112 e and 112 f, respectively. The conductive lines 110 c and 110 d are coupled elsewhere on the semiconductor device 100 to the first terminal T1.

In some embodiments, the overall high-area capacitor 101 comprises a high-value capacitor having a capacitance of on the order of hundreds of nano-farads that is comprised of thousands of the capacitors 102 a, 102 b . . . 102 y, and 102 z that comprise smaller-area MIM units, for example.

The cross-sectional views shown in FIGS. 5 and 6 illustrate various other material layers and components of the semiconductor device 100 in accordance with some embodiments. To manufacture the semiconductor device 100, first, a workpiece 120 is provided. The workpiece 120 may include a semiconductor substrate comprising silicon or other semiconductor materials and may be covered by an insulating layer, for example. The workpiece 120 may also include other active components or circuits, not shown. The workpiece 120 may comprise silicon oxide over single-crystal silicon, for example. The workpiece 120 may include conductive layers or elements, e.g., transistors, diodes, resistors, inductors, etc., not shown. Compound semiconductors, GaAs, InP, Si/Ge, or SiC, as examples, may be used in place of silicon. The workpiece 120 may comprise a silicon-on-insulator (SOI) or a germanium-on-insulator (GOI) substrate, as examples.

In some embodiments, the workpiece 120 comprises a silicon interposer that is adapted to be used for packaging one or more integrated circuit dies in a 2.5 dimensional (D) or 3D packaging scheme, for example. The workpiece 120 may include wiring and redistribution layers (RDLs), not shown, that are adapted to provide electrical connections between multiple integrated circuit dies coupled to the workpiece 120.

An insulating material layer 122 a is formed over the workpiece 120 using a deposition process, and an etch stop layer 124 a is formed over the insulating material layer 122 a, in some embodiments. The insulating material layer 122 a may comprise silicon dioxide, silicon oxynitride, carbon-doped silicon oxide, a spin-on glass, a spin-on polymer, or other insulators, and the etch stop layer 124 a may comprise silicon nitride, silicon oxynitride, silicon carbide, oxygen-doped silicon carbide, nitrogen-doped silicon carbide, or other insulators having an etch selectivity to the insulating material layer 122 a, as examples. The insulating material layer 122 a may comprise a thickness of about 10 nm to about 1,000 nm, and the etch stop layer 124 a may comprise a thickness of about 10 nm to about 100 nm, as examples. Alternatively, the insulating material layer 122 a and the etch stop layer 124 a may comprise other materials and dimensions.

A conductive material such as copper, a copper alloy, or other conductors is formed over the etch stop layer 124 a. The conductive material is patterned using a lithography process and etch process to form the bottom plates 106 of the capacitor 102 a and the protection device 104 a in some embodiments. Alternatively, the bottom plates 106 may be formed using a damascene and/or plating process, by forming an insulating material (e.g., a portion of insulating material layer 122 b) over the etch stop layer 124 a, patterning the insulating material, and filling the patterned insulating material with a conductive material to form the bottom plates 106. Excess conductive material may be removed from over a top surface of the insulating material using a chemical-mechanical polishing (CMP) process and/or etch process. Each of the bottom plates 106 may comprise a thickness of about 100 nm to about 2,000 nm and a width of about 10 μm to about 500 μm, as examples. Alternatively, the bottom plates 106 may comprise other dimensions.

A capacitor dielectric 130 is formed over the bottom plates 106. The capacitor dielectric 130 may comprise an insulator such as silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, a metal oxide, a polymer, a laminate of a plurality of different dielectric films, or other dielectric materials. The capacitor dielectric 130 may comprise a thickness of about 5 nm to about 50 nm, for example. Alternatively, the capacitor dielectric 130 may comprise other materials and dimensions.

A conductive material comprising similar materials as described for the conductive material of the bottom plates 106 in some embodiments is formed over the capacitor dielectric 130. The conductive material is patterned using lithography to form the top plates 108 of the capacitor 102 a and the protection device 104 a comprising the redundant capacitor. The capacitor dielectric 130 is also patterned during the etching process used to form the top plates 108 in some embodiments. Alternatively, the capacitor dielectric 130 may be patterned using a separate lithography and etch step, in other embodiments. Each of the top plates 108 may comprise a thickness of about 100 nm to about 2,000 nm and a width of about 10 μm to about 500 μm, as examples. Alternatively, the top plates 108 may comprise other dimensions.

An insulating material layer 122 b is formed over the top plates 108, exposed portions of the bottom plates 106, and exposed portions of the etch stop layer 124 a. The insulating material layer 122 b comprises similar materials and dimensions as described for insulating material layer 122 a in some embodiments. The insulating material layer 122 b conforms to the shape of the underlying capacitor 102 a or protection device 104 a in some embodiments, as shown in FIGS. 5 and 6. In other embodiments, the insulating material layer 122 b may have a flat top surface or the insulating material layer 122 b may be planarized so that it has a flat top surface, not shown.

An etch stop layer 124 b comprising similar materials and dimensions as described for etch stop layer 124 a is formed over the insulating material layer 122 b. An insulating material layer 122 c comprising similar materials and dimensions as described for insulating material layers 122 a and 122 b is formed over the etch stop layer 124 b.

The conductive lines 110 a, 110 b, 110 c, and 110 d and conductive vias 112 a, 112 b, 112 c, 112 d, 112 e, and 112 f (which are not all shown in FIGS. 5 and 6; see FIG. 4) are formed in the insulating material layer 122 c, the etch stop layer 124 b, and the insulating material layer 122 b using a damascene process which may comprise a single damascene or dual damascene process in some embodiments. For example, the insulating material layer 122 c, etch stop layer 124 b, and insulating material layer 122 b are patterned using a lithography and etch process, and the patterns in the insulating material layer 122 c, etch stop layer 124 b, and insulating material layer 122 b are filled with a conductive material to form the conductive lines 110 a, 110 b, 110 c, and 110 d and conductive vias 112 a, 112 b, 112 c, 112 d, 112 e, and 112 f. The conductive lines 110 a, 110 b, 110 c, and 110 d and conductive vias 112 a, 112 b, 112 c, 112 d, 112 e, and 112 f may include a liner 126 and a conductive material such as copper or a copper alloy formed over the liner 126, in some embodiments. The liner 126 may comprise a barrier layer and/or seed layer, as examples. In some embodiments, the liner 126 is not included. In some embodiments, the conductive lines 110 a, 110 b, 110 c, and 110 d and conductive vias 112 a, 112 b, 112 c, 112 d, 112 e, and 112 f may be formed using subtractive etch processes.

In some embodiments, the conductive lines 110 a and 110 b (and also the other conductive lines) may include downwardly-extending portions, as shown in FIG. 6, for example, in embodiments wherein the top surface of insulating material layer 122 b is not planar. The conductive lines 110 a, 110 b, 110 c, and 110 d may comprise a width in a top view of about 0.1 μm to about 10 μm, and the conductive vias 112 a, 112 b, 112 c, 112 d, 112 e, and 112 f may comprise a width in a cross-sectional view of about 0.01 μm to about 1 μm, as examples. In other embodiments, the conductive lines 110 a and 110 b may not include downwardly-extending portions, e.g., wherein the top surface of insulating material layer 122 b comprises a flat surface.

The materials and dimensions described for the workpiece 102, insulating materials 122 a, 122 b, and 122 c, etch stop layers 124 a and 124 b, bottom and top plates 106 and 108, capacitor dielectric 130, liner 126, and conductive lines 110 a, 110 b, 110 c, and 110 d and conductive vias 112 a, 112 b, 112 c, 112 d, 112 e, and 112 f may alternatively comprise other materials and dimensions, in accordance with embodiments of the present disclosure. Likewise, other methods may be used to form the novel large-area capacitor 101 that includes the capacitors 102 a and protection devices 104 a.

FIG. 7 is a schematic of a semiconductor device 100 wherein the protection devices 104 a, 104 b . . . 104 y, and 104 z of the protection structure 104 of the large-area capacitor 101 comprise fuses in accordance with some embodiments. The fuses may comprise a semiconductive material as shown in FIG. 8, a conductive line as shown in FIG. 9, or a conductive via as shown in FIG. 10, in accordance with some embodiments of the present disclosure. The fuses have a higher resistance than the conductive material of the adjacent elements they are connected to, in some embodiments. The fuses will burn out to form an open circuit if a current higher than a predetermined limit or amount is forced through or passed through them. As a result, if the corresponding capacitor 102 a that the fuse protects fails, the failed capacitor 102 a is electrically isolated and therefore the overall large-area capacitor 101 continues to perform its intended function.

For example, FIG. 8 is a cross-sectional view of a semiconductor device 100 wherein a protection device 104 a comprising a fuse comprises a segment of semiconductive material 140 in accordance with some embodiments. The fuse may be formed in some embodiments by forming an insulating material layer 122 d over the workpiece 120, and forming a layer of polysilicon or other type of semiconductive material over the insulating material layer 122 d. The layer of semiconductive material is patterned using a lithography process and etch process to form the segment which comprises the semiconductive material. The segment of semiconductive material 140 may comprise width of about 1 nm to about 100 nm, a thickness of about 1 nm to about 50 nm, and a width in a top view (not shown) of about 1 nm to about 100 nm in some embodiments. Alternatively, the segment of semiconductive material 140 may comprise other dimensions. In some embodiments, the dimensions of the fuse comprising the segment of semiconductive material 140 are of a sufficient size so that if the capacitor 102 a fails and is electrically shorted, the fuse is ‘blown’ and is changed to an open position, isolating the failed capacitor 102 a from the other capacitors 102 b . . . 102 y, and 102 z of the capacitor 101. Before the capacitor 102 a fails, the fuse is in a closed position wherein current may flow through the fuse, for example.

One end of the protection device 104 a comprising the segment of semiconductive material 140 is coupled to the bottom plate 106 of the capacitor 102 a by a conductive via 112 h formed in insulating material layer 122 e and a conductive plug 142 a which is formed in etch stop layer 124 c and insulating material layer 122 a. The other opposing end of the segment of semiconductive material 140 is coupled to terminal T2 by a conductive via 112 i formed in insulating material layer 122 e, a conductive plug 142 b formed in etch stop layer 124 c, insulating material layer 122 a, and etch stop layer 124 a, a conductive via 122 g formed in insulating material layer 122 b, and a conductive plug 110 e formed in etch stop layer 124 b and insulating material layer 122 c. In some embodiments, the segment of semiconductive material 140 is disposed between neighboring capacitor electrodes (e.g., the plates 106 and/or 108), for example.

FIG. 9 shows a top view of a semiconductor device 100 wherein protection device 104 a comprise fuses that comprise a portion 150 of a conductive line 110 f in accordance with some embodiments. The portions 150 of the conductive lines 110 f have a higher resistance than the other portions of the conductive lines 110 f because of their decreased width, for example. The portions 150 of the conductive lines 110 f have a higher electrical resistance, due to a reduction of the conductive line 110 f cross-section, in some embodiments. The conductive lines 110 f are coupled to the bottom plates 106 by conductive vias 112 j in the embodiments shown. If the capacitor 102 a fails, one or more of the portions 150 of the conductive lines 110 f will burn out to isolate the faulty capacitor 102 a, so that the overall capacitor 101 survives.

Two capacitors 102 a and 102 b are shown in FIG. 9. Capacitor 102 a includes four portions 150 of conductive lines 110 f coupled thereto that function as fuses because of their decreased width. The length of the portions 150 in the top view may comprise about 100 nm to about 10 μm in some embodiments. The width of the portions 150 in the top view may comprise about 10 nm to about 1 μm in some embodiments. The thickness of the portions 150 of the conductive lines 110 f is substantially the same as the thickness of the conductive lines 110 f, which may be about 100 nm to about 2,000 nm in some embodiments, for example. Alternatively, the portions 150 of the conductive lines 110 f may comprise other dimensions.

Capacitor 102 b also includes four portions 150 of conductive lines 110 f coupled thereto that function as a fuse protection device 104 b in FIG. 9. Alternatively, the protection devices 104 a and 104 b may include other numbers of portions 150 of conductive lines; e.g., only one portion 150, or two or more portions 150 of conductive lines may be used as a fuse type of protection device 104 a or 104 b coupled to a capacitor 102 a, 102 b . . . 102 y, and 102 z in accordance with some embodiments. FIG. 9 also illustrates a portion 152 of the conductive lines 110 f that may be coupled to terminal T2 in some embodiments. In some embodiments, the narrowed portions 150 of conductive lines 110 f with higher resistance are disposed between neighboring capacitor electrodes, for example.

FIG. 10 is a cross-sectional view of a semiconductor device 100 wherein a protection device 104 a comprising a fuse comprises one or more conductive vias 160 in accordance with some embodiments. The conductive vias 160 are coupled to the bottom plate 106 and/or top plate 108 of the capacitor 102 a and have a higher resistance than the plates 106 and 108 and conductive plugs 110 g and 110 h, for example. The conductive via or vias 160 are formed within insulating material layer 122 b. Three conductive vias 160 are shown in FIG. 10; two coupled to the bottom plate 106 of the capacitor 102 a and one coupled to the top plate 108. The two conductive vias 160 coupled to the bottom plate 106 are coupled to terminal T2 by conductive plugs 110 h formed within insulating material layer 122 c, etch stop layer 124 b, and insulating material layer 122 b. Note that the conductive via 160 coupled to the top plate 108 is coupled to terminal T1 rather than to terminal T2 and is not shown in the schematic of FIG. 7. The conductive via 160 coupled to the top plate 108 is coupled to terminal T1 by a conductive plug 110 g formed within insulating material layer 122 c, etch stop layer 124 b, and insulating material layer 122 b.

Only one conductive via 160 may be included in the capacitor 101 as a fuse type of protection device 104 a in accordance with some embodiments, coupled either to the top plate 108 or the bottom plate 106. Alternatively, the protection device 104 a may comprise two or more of the conductive vias 160 that function as fuses. The length of the conductive vias 160 may comprise about 10 nm to about 1,000 nm in some embodiments. The width of the conductive vias 160 may comprise about 0.01 μm to about 1 μm in some embodiments. Alternatively, the conductive vias 160 may comprise other dimensions.

The conductive vias 160 may include a liner 126 and may be formed during the formation of conductive plugs 110 g and 110 h using a dual damascene process. The conductive vias 160 comprise the same material as the conductive plugs 110 g and 110 h in these embodiments. Alternatively, the conductive vias 160 may not include a liner 126. In some embodiments, the conductive vias 160 may be formed in a single damascene process, and may comprise a different material or the same material as the conductive plugs 110 g and 110 h. In some embodiments, the conductive vias 160 may comprise a material that is less conductive and has a higher resistance than the material of the conductive lines 110 g and 110 h, such as tungsten, aluminum, titanium, tantalum, tantalum nitride, titanium nitride, or other conductors, which is advantageous in that the conductive vias 160 comprising the fuses may more easily “blow” if the capacitor 102 a fails.

In some embodiments, if the capacitor 102 a fails, an electrical current forced through one of the conductive vias 160 leads to local burn-out of the conductive via 160 due to Joule's heating, thus causing an open circuit of the conductive via 160, for example.

In some embodiments wherein the conductive vias 160 include a liner 126, the liner 126 may include a barrier layer and/or a seed layer. The barrier layer may comprise a metal and the seed layer may comprise copper in some embodiments, as examples. In some embodiments, a pinch-off may be formed near the end of the formation of a portion of the liner 126 (e.g., comprising the barrier liner and/or seed layer) to form higher electrical resistance conductive vias 160, e.g., due to a decrease of an amount of the barrier layer and/or seed layer in the conductive via 160 which is caused by the pinch-off process. For example, the barrier layer and/or seed layer formation process may have different step coverage capabilities by tuning the process parameters thereof. For a dual damascene structure, the conductive via 160 openings may be closed up (i.e., pinched off) by the barrier layer at the end of barrier layer formation process or by the seed layer at the beginning of seed layer formation process, e.g., so that the seed layer will not be deposited inside the trenches for the conductive vias 160, but will be deposited only inside the trenches for the conductive plugs 110 g and 110 h. As a result, in a subsequent electroplating process or other process used to fill the trenches for the conductive vias 160 and the conductive plugs 110 g and 110 h, the conductive fill material (i.e., comprising Cu or other type of conductive material) will be deposited only inside the trenches for the conductive plugs 110 g and 110 h, but not inside the trenches for the conductive vias 160, therefore forming conductive vias 160 that comprise high-resistance via fuses.

The embodiments shown in FIGS. 9 and 10 are particularly advantageous in some applications, because a minimal manufacturing process flow and/or design change is required to implement the protection devices 104 a and 104 b. For example, in FIG. 9, a change in the design of the conductive lines 110 f to include the portions 150 that have a smaller width than the remainder of the conductive lines 110 f is all that is required. Similarly, in FIG. 10, a change in the design of conductive vias that would ordinarily be coupled to the bottom plate 106 or top plate 108 (e.g., see conductive vias 112 b, 112 c, and 112 d in FIG. 5) is all that is required, to decrease the width or diameter of the conductive vias 160 or alter the liner 126 or prohibit or limit the formation of the liner 126 so that the vias function as fuses.

Note that in the embodiments shown in FIGS. 7 through 10, the insulating material layers 122 d and 122 e may comprise similar materials and dimensions as described for insulating material layers 122 a, 122 b, and 122 c shown in FIGS. 5 and 6. Likewise, the etch stop layer 124 c may comprise similar materials and dimensions as described for etch stop layers 124 a and 124 b shown in FIGS. 5 and 6.

FIG. 11 is a flow chart 180 of a method of manufacturing a semiconductor device 100 in accordance with some embodiments. In step 182, first capacitor plates 106 are formed over a workpiece 120 (see also FIG. 6 and FIG. 1; the first capacitor plates comprise the top plates of the capacitors 102 a, 102 b . . . 102 y, and 102 z). In step 184, second capacitor plates 108 (e.g., comprising the bottom plates of the capacitors 102 a, 102 b . . . 102 y, and 102 z in FIG. 1) are formed over the workpiece 120 proximate the first capacitor plates 106. In step 186, each of the first capacitor plates is coupled to a first terminal T1 (see also FIG. 1). In step 188, a protection device 104 a, 104 b . . . 104 y, and 104 z is coupled to each of the second capacitor plates (e.g., comprising the bottom plates of the capacitors 102 a, 102 b . . . 102 y, and 102 z in FIG. 1). In step 190, each of the protection devices 104 a, 104 b . . . 104 y, and 104 z is coupled to a second terminal T2.

The order in which the various steps 182, 184, 186, 188, and 190 are performed is not limited to the order illustrated in the flow chart 180 shown in FIG. 11. For example, in some embodiments, i.e., in the embodiments shown in FIGS. 3 through 6, the protection devices 104 a, 104 b . . . 104 y, and 104 z are formed simultaneously with the formation of the capacitor plates of the capacitors 102 a, 102 b . . . 102 y, and 102 z. For example, step 188 is formed simultaneously with steps 182 and 184 in some embodiments. In other embodiments, i.e., in the embodiments shown in FIGS. 7 and 8, the protection devices 104 a, 104 b . . . 104 y, and 104 z comprising a polysilicon fuse 140 are formed before the formation of the capacitor plates of the capacitors 102 a, 102 b . . . 102 y, and 102 z. For example, step 188 is formed before steps 182 and 184 in some embodiments. In other embodiments, i.e., in the embodiments shown in FIGS. 7 and 10, the protection devices 104 a, 104 b . . . 104 y, and 104 z comprising via fuses are formed simultaneously with the coupling of the capacitor plates of the capacitors 102 a, 102 b . . . 102 y, and 102 z. For example, step 188 is formed simultaneously with step 186 and also step 190 in some embodiments. Alternatively, the various steps 182, 184, 186, 188, and 190 of the flow chart 180 may be performed before, after, or simultaneously with other steps 182, 184, 186, 188, and 190 and/or other manufacturing process steps of the semiconductor device 100.

Coupling the protection devices 104 a, 104 b . . . 104 y, and 104 z comprises coupling a redundant capacitor or a fuse in some embodiments. The plurality of first capacitor plates and the plurality of second capacitor plates comprise a plurality of capacitors 102 a, 102 b . . . 102 y, and 102 z coupled together in parallel, and a protection device 104 a, 104 b . . . 104 y, and 104 z is coupled in series with each of the plurality of capacitors 102 a, 102 b . . . 102 y, and 102 z, in some embodiments.

In some embodiments, the protection devices 104 a, 104 b . . . 104 y, and 104 z are coupled below the plurality of second capacitor plates (e.g., below the bottom plates 106 of the capacitors 102 a, 102 b . . . 102 y, and 102 z), e.g., in the embodiments shown in FIGS. 7 and 8). In other embodiments, the protection devices 104 a, 104 b . . . 104 y, and 104 z are coupled or formed in material layers that the plurality of first capacitor plates and the plurality of second capacitor plates of the capacitors 102 a, 102 b . . . 102 y, and 102 z are formed in, e.g., in the embodiments shown in FIGS. 4 through 6. In other embodiments, the protection devices 104 a, 104 b . . . 104 y, and 104 z are coupled above the plurality of second capacitor plates of the capacitors 102 a, 102 b . . . 102 y, and 102 z, e.g., in the embodiments shown in FIGS. 9 and 10.

In some embodiments, pairs of the first plates and second plates comprise a plurality of capacitive units (e.g., comprising the capacitors 102 a, 102 b . . . 102 y, and 102 z), and the protection devices 104 a, 104 b . . . 104 y, and 104 z are adapted to self-diagnose and isolate a defaulted one of the plurality of capacitive units.

Some embodiments of the present disclosure include methods of manufacturing semiconductor devices 100, and also include semiconductor devices 100 manufactured using the methods described herein. Some embodiments of the present disclosure also include capacitors 101 that include the protection devices 104 a, 104 b . . . 104 y, and 104 z and protection structures 104 described herein.

Advantages of some embodiments of the present disclosure include providing novel capacitors 101 that include the protection structures 104 described herein. The protection structures 104 include one or more protection devices 104 a, 104 b . . . 104 y, and 104 z that comprise redundant capacitors or fuses that are placed in series with the capacitors 102 a, 102 b . . . 102 y, and 102 z of the overall capacitor 101. The protection structures 104 advantageously provide self-diagnosis and isolation of faulty capacitors 102 a, 102 b . . . 102 y, and 102 z and prevent catastrophic failure of the capacitor 101.

In embodiments wherein the protection devices 104 a, 104 b . . . 104 y, and 104 z comprise redundant capacitors, if one of the capacitors 102 a, 102 b . . . 102 y, and 102 z fails and a short-circuit is formed through the failed capacitor, the redundant capacitor remains connected in parallel with the functioning capacitors 102 a, 102 b . . . 102 y, and 102 z so that the capacitor 101 continues to function. In embodiments wherein the protection devices 104 a, 104 b . . . 104 y, and 104 z comprise fuses, the fuse structures turn into open circuits in an event of a failure so that the capacitor 101 continues to function.

In some embodiments, a failure of certain capacitors 102 a, 102 b . . . 102 y, and 102 z actually results in an increase in the overall capacitance of the capacitor 101, e.g., in embodiments wherein the protection devices 104 a, 104 b . . . 104 y, and 104 z comprise redundant capacitors. In other embodiments, a failure of certain capacitors 102 a, 102 b . . . 102 y, and 102 z may result in a slight but substantially negligible decrease in the overall capacitance of the capacitor 101, e.g., in embodiments wherein the protection devices 104 a, 104 b . . . 104 y, and 104 z comprise fuses.

In some embodiments, the large-area capacitors 101 can be implemented in semiconductor devices that comprise interposer packages for integrated circuits, and the capacitors 101 comprise a high-value decoupling capacitance, e.g., on the order of hundreds of nano-farads, which effectively attenuates voltage fluctuations that may occur due to simultaneous switching of various circuits, for example. The high capacitance value is achieved by coupling together many of the capacitors 102 a, 102 b . . . 102 y, and 102 z together in parallel. The novel protection devices 104 a, 104 b . . . 104 y, and 104 z provide protection from a complete failure of the large-area capacitor 101 due to a failure of one of the capacitors 102 a, 102 b . . . 102 y, and 102 z. If one or more of the capacitors 102 a, 102 b . . . 102 y, and 102 z fails, the capacitor 101 continues to function and serve the decoupling purpose.

The protection structure 104 provides a self-protection function for each of the capacitors 102 a, 102 b . . . 102 y, and 102 z that can be triggered either by a burn-in screening test in a foundry or in a field application. In an event of a failure of one of the capacitors 102 a, 102 b . . . 102 y, and 102 z, the capacitor 101 survives with nearly zero loss of capacitance, (e.g., substantially negligible) due to the large number of the capacitors 102 a, 102 b . . . 102 y, and 102 z in the capacitor 101. In embodiments wherein the protection structure 104 comprises fuses, the integration of the protection structure 104 does not degrade capacitance density of the capacitor 101, for example.

Although some embodiments of the present disclosure are particularly advantageous when implemented in large-area capacitors that are used for decoupling, the various embodiments disclosed herein also have application in smaller capacitors, capacitors that are not MIM capacitors, and capacitors that are used for other functions than decoupling, as examples.

Implementing the novel protection structures 104 in capacitors 101 of semiconductor devices 100 results in increased manufacturing yields and longer service life in some applications, by preventing or reducing failures of the capacitors 101. Furthermore, the novel capacitor 101 structures and designs are easily implementable in manufacturing process flows. In some embodiments, no process modifications are needed to implement the protection structure 104, for example.

In accordance with some embodiments of the present disclosure, a semiconductor device includes a first capacitor and a protection device coupled in series with the first capacitor. A second capacitor is coupled in parallel with the first capacitor and the protection device.

In accordance with other embodiments, a capacitor includes a plurality of first plates, each of the plurality of first plates being coupled to a first terminal. The capacitor includes a plurality of second plates. Each of the plurality of second plates is coupled to a second terminal, and each of the second plates is disposed proximate one of the plurality of first plates. A protection device is coupled between one of the plurality of second plates and the second terminal. The protection device comprises a redundant capacitor or a fuse.

In accordance with other embodiments, a method of manufacturing a semiconductor device includes forming a plurality of first capacitor plates over a workpiece, forming a plurality of second capacitor plates over the workpiece proximate the plurality of first capacitor plates, and coupling each of the plurality of first capacitor plates to a first terminal. A protection device is coupled to each of the plurality of second capacitor plates. Each of the protection devices is coupled to a second terminal.

Although some embodiments of the present disclosure and their advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure as defined by the appended claims. For example, it will be readily understood by those skilled in the art that many of the features, functions, processes, and materials described herein may be varied while remaining within the scope of the present disclosure. Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the disclosure of the present disclosure, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the present disclosure. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps. 

What is claimed is:
 1. A semiconductor device, comprising: a first capacitor; a protection device coupled in series with the first capacitor; and a second capacitor coupled in parallel with the first capacitor and the protection device.
 2. The semiconductor device according to claim 1, wherein the protection device comprises a third capacitor.
 3. The semiconductor device according to claim 1, wherein the protection device comprises a fuse.
 4. The semiconductor device according to claim 3, wherein the fuse comprises a conductive line.
 5. The semiconductor device according to claim 3, wherein the fuse comprises a conductive via.
 6. The semiconductor device according to claim 3, wherein the fuse comprises a semiconductive material.
 7. The semiconductor device according to claim 1, wherein the protection device comprises a first protection device, further comprising a second protection device coupled in series with the second capacitor, and wherein the second capacitor and the second protection device are coupled in parallel with the first capacitor and the first protection device.
 8. A capacitor, comprising: a plurality of first plates, each of the plurality of first plates being coupled to a first terminal; a plurality of second plates, each of the plurality of second plates being coupled to a second terminal, each of the second plates being disposed proximate one of the plurality of first plates; and a protection device coupled between one of the plurality of second plates and the second terminal, wherein the protection device comprises a redundant capacitor or a fuse.
 9. The capacitor according to claim 8, wherein the protection device comprises a fuse, and wherein the fuse comprises a portion of a conductive line, a conductive via, or a segment comprising a semiconductive material.
 10. The capacitor according to claim 8, wherein the capacitor comprises a metal-insulator-metal (MIM) capacitor, and wherein the capacitor is formed in a plurality of metallization layers of a semiconductor device.
 11. The capacitor according to claim 8, wherein the capacitor comprises a large-area capacitor having an overall length or width in a top view of about a few hundred μm to about several cm, and wherein the protection device prevents failure of the large-area capacitor.
 12. The capacitor according to claim 8, wherein the capacitor includes about 1,000 or more of the plurality of first plates or the plurality of second plates.
 13. The capacitor according to claim 8, wherein the capacitor comprises a decoupling capacitor.
 14. The capacitor according to claim 8, wherein pairs of the plurality of first plates and the plurality of second plates comprise a plurality of capacitive units, and wherein the protection device is adapted to self-diagnose and isolate a defaulted one of the plurality of capacitive units.
 15. A method of manufacturing a semiconductor device, the method comprising: forming a plurality of first capacitor plates over a workpiece; forming a plurality of second capacitor plates over the workpiece proximate the plurality of first capacitor plates; coupling each of the plurality of first capacitor plates to a first terminal; coupling a protection device to each of the plurality of second capacitor plates; and coupling each of the protection devices to a second terminal.
 16. The method according to claim 15, wherein coupling the protection devices comprises coupling a redundant capacitor or a fuse.
 17. The method according to claim 16, wherein the plurality of first capacitor plates and the plurality of second capacitor plates comprise a plurality of capacitors coupled together in parallel, and wherein coupling the protection devices comprises coupling a protection device in series with each of the plurality of capacitors.
 18. The method according to claim 15, wherein coupling the protection devices comprises coupling the protection devices below the plurality of second capacitor plates.
 19. The method according to claim 15, wherein coupling the protection devices comprises coupling the protection devices in material layers that the plurality of first capacitor plates and the plurality of second capacitor plates are formed in.
 20. The method according to claim 15, wherein coupling the protection devices comprises coupling the protection devices above the plurality of second capacitor plates. 